bav19w-g, bav20w-g, bav21w-g www.vishay.com vishay semiconductors rev. 1.3, 13-may-13 1 document number: 85188 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal switching diodes, high voltage mechanical data case: sod-123 weight: approx. 9.4 mg packaging codes/options: 18/10k per 13 " reel (8 mm tape), 10k/box 08/3k per 7 " reel (8 mm tape), 15k/box features ? silicon epitaxial planar diodes ? for general purpose ? aec-q101 qualified ? base p/n-g3 - green, commercial grade ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? ? ? ? ? note (1) valid provided that leads are kept at ambient temperature parts table part type differentiation ordering code type marking internal construction remarks bav19w-g v r = 100 v bav19w-g3-08 or bav19w-g3-18 as single diode tape and reel bav20w-g v r = 150 v bav20w-g3-08 or bav20w-g3-18 at single diode tape and reel bav21w-g v r = 200 v BAV21W-G3-08 or bav21w-g3-18 au single diode tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit continuous re verse voltage bav19w-g v r 100 v bav20w-g v r 150 v bav21w-g v r 200 v repetitive peak reverse voltage bav19w-g v rrm 120 v bav20w-g v rrm 200 v bav21w-g v rrm 250 v dc forward current (1) i f 250 ma rectified current (average) half ? wave rectification with resist. load (1) i f(av) 200 ma repetitive peak forward current (1) f ? 50 hz i frm 625 ma surge forward current t < 1 s i fsm 1a power dissi pation (1) p tot 410 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air (1) r thja 375 k/w junction temperature (1) t j 150 c storage temperature range (1) t stg - 65 to + 150 c operating temperature range t op - 55 to + 150 c
bav19w-g, bav20w-g, bav21w-g www.vishay.com vishay semiconductors rev. 1.3, 13-may-13 2 document number: 85188 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward current vs. forward voltage fig. 2 - admissible forward current vs. ambient temperature fig. 3 - admissible power dissipatio n vs. ambient temperature fig. 4 - dynamic forward resistance vs. forward current electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition pa rt symbol min. typ. max. unit forward voltage i f = 100 ma v f 1v i f = 200 ma v f 1250 mv leakage current v r = 100 v bav19w-g i r 100 na v r = 100 v, t j = 100 c bav19w-g i r 15 a v r = 150 v bav20w-g i r 100 na v r = 150 v, t j = 100 c bav20w-g i r 15 a v r = 200 v bav21w-g i r 100 na v r = 200 v, t j = 100 c bav21w-g i r 15 a dynamic forward resistance i f = 10 ma r f 5 ? diode capacitance v r = 0, f = 1 mhz c d 1.5 pf reverse recovery time i f = 30 ma, i r = 30 ma, i r = 3 ma, r l = 100 ? t rr 50 ns 18858 1000 100 10 1 0.1 0.01 i- for w ard c u rrent (ma) f 0 0.4 0.6 0.8 1 0.2 v f - for w ard v oltage ( v ) t j = 100 c 25 c 0.1 0.2 0.3 0 0 30 60 90 120 150 18859 t am b - am b ient temperat u re (c) i , i - admissi b le for w ard c u rrent (a) of i c u rrent (rectif.) o dc c u rrent i f 21937 t am b - am b ient temperat u re (c) p tot - admissi b le po w er dissipation (mw) 0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 r - dynamic for w ard resistance f () 10 100 1 1 100 10 18861 i f - for w ard c u rrent (ma)
bav19w-g, bav20w-g, bav21w-g www.vishay.com vishay semiconductors rev. 1.3, 13-may-13 3 document number: 85188 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - leakage current vs. junction temperature fig. 6 - diodes capacitance vs. reverse voltage fig. 7 - non-repetitive peak forward current vs. pulse duration maximum admissible values of square pulses 0.1 18862-1 1 10 100 1000 0 40 80 120 160 200 i r (t j )/i r (25 c) - leakage c u rrent t j - j u nction temperat u re (c) re v erse v oltage ba v 19w-g v r = 100 v ba v 20w-g v r = 150 v ba v 21w-g v r = 200 v 21942 0.8 0.6 0.4 1.4 1.2 1.0 0.2 0 c - diode capacitance (pf) d v r - re v erse v oltage ( v ) 2.0 1.8 1.6 0 5 10 15 20 25 30 35 1 10 100 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 ? ? ? t p - te s t pul s e ( s ) i f s m (a) t j = 25 c - prior to s urge
bav19w-g, bav20w-g, bav21w-g www.vishay.com vishay semiconductors rev. 1.3, 13-may-13 4 document number: 85188 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sod-123 0.1 (0.004) max. 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.098) 0.85 (0.033) 0.85 (0.033) 0.85 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.018) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.008) 0 to 8 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s8- v -3910.01-001 (4) 17432
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